Power semiconductor device (diodes, BJTs, thyristors, MOSFETs and IGBTs) and integraed structures (modules). Structures, function, characteristics and parameters, conditions for reliable operation. Connection of devices in parallel and in series. Operating reliability of power components and equipments.
Lessons (laboratories) start at 16:15 (4:15 PM) in the room T2:E1-3c (old marking "H3") in the ground floor of Hall laboratory building. Lessons are compulsory, only excused absences are accepted. English course can be merged together with the czech version of the same course (A0M13MKV) and both courses are provided in the same room at the same time. Lessons are prepared and leaded by Jiří Hájek, lectures are prepared by prof. Benda.
 Benda, V., Gowar, J., Grant, G. A. Power Semiconductor Devices. J.Wiley & Sons, Chichester. 1999.
 Baliga, J. Power Semiconductor Devices. Boston: PWS Publishing Company. 1995.
 Moodle website: AE1B13VST course.