Power components in electrical engineering

B232 - Letní 23/24

Power components in electrical engineering - BE1M13VSE

Kredity 5
Semestry letní
Zakončení zápočet a zkouška
Jazyk výuky angličtina
Rozsah výuky 2P+2L
Anotace
Power semiconductor device (diodes, BJTs, thyristors, MOSFETs and IGBTs) and integraed structures (modules). Structures, function, characteristics and parameters, Passive components of powet electronic. Connection of devices in parallel and in series.
Cíle studia
A student are well-educated of properties of fundamental electronic devices, their application in power electronic circuits
Osnovy přednášek
1. Power diodes
2. Current controlled devices
3. Voltage controlled devices
4. Thyristor switching devices
5. Fast switching and RF power devices
6. Dewice cooling and encapsulations
7. Passive components -resistors
8. Passive components -capacitors
9. Passive components -inductors and transformers
10.Distributed element circuits
11.Devices with distributed elements
12.Electromechanical devices
13.Device connection in series and in parallel
14.Electromagnetic compatibility in power electronic.
Osnovy cvičení
1.Safety in laboratories. Instruction about lab. measurements - group 1.
2.Instruction about lab. measurements - group 1.
3.Temperature dependence of power semiconductor devices
4. Power Amplifiers
5.Resistor and capacitors characteristics at HF
6, Semiconductor switch
7.HF coils and transformers
8.Instruction about lab. measurements - group 2.
9.Distributed parameter line
10. HF generator matching .
11 Electronic devices cooling
12.EMC evaluating
13. EMC filters
14.Evaluation of lab. reports. A credit.
Literatura
Lutz J.et all: Semiconductor Power Devices: Physics, Charakteristics, Reliability, Springer 2011
Požadavky
The credit reguirements: seminar presentation, one protokol of labs and the student must obtain minimally 50 % of avaliable points in the tests.