| Počet kreditů | 4 |
| Vyučováno v | Winter and summer |
| Rozsah výuky | 2P+2C |
| Garant předmětu | |
| Přednášející | Jan Vobecký |
| Cvičící | Jan Vobecký |
Physical and technological structures. Development trends. Parameters and applications. Bipolar structures. MOS structures. BiMOS structures. PN diodes. Schottky diodes. Bipolar transistors. MOS and IGBT transistors. Thyristors (including GTO and MCT). Secondary breakdown, mechanism, safe area. Smart-power devices. High voltage ICs, operation, principles, applications
1. Physical and technological structures
2. Development trends
3. Parameters and applications
4. Bipolar structures
5. MOS structures
6. BiMOS structures
7. PN diodes
8. Schottky diodes
9. Bipolar transistors
10. MOS and IGBT transistors
11. Thyristors (including GTO and GCT)
12. Secondary breakdown, mechanism, SOA
13. Smart-power devices
14. High voltage ICs, operation, principles, applications
B. J. Baliga, Power Semiconductor Devices, PWS Publishing Company, 2000
