Advanced Electronic Devices

B232 - Summer 23/24
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Advanced Electronic Devices - XP34PED

Student survey results
Credits 4
Semesters Winter
Completion Exam
Language of teaching Czech
Extent of teaching 2P+2C
Annotation
Energy band engineering. Quantum well, wire, point. 2D electron gas based devices (HEMT, MOD FET). Devices based on resonance double-barrier tunnelling. 3D structures. Quantum device applications (memories, generators, multipliers). Heterogeneous structures. Microwave devices, HBT, Gunn diodes. Microwave device applications. Heterogeneous devices with internal optical coupling. Cryotronic devices. Recording media. IC development trends.
Study targets
No data.
Course outlines
1. Energy band engineering
2. Quantum well, wire, point
3. 2D electron gas based devices (HEMT, MOD FET)
4. Devices based on resonance double-barrier tunnelling
5. 3D structures
6. Quantum device applications (memories, generators, multipliers)
7. Heterogeneous structures
8. Microwave devices, HBT, Gunn diodes
9. Microwave device applications
10. Heterogeneous devices with internal optical coupling
11. Cryotronic devices
12. Recording media
13. IC development trends
14. Discussion
Exercises outlines
n
Literature
Fahrner, W. R. (ed.): Nanotechnology and Nanoelektronics: Materials,
devices, measurement techniques. Springer, 2004. 269 p. ISBN: 3-540-22452-1

Other: On the recommendation of the lecturer
Requirements
c