AE0M13MKV - Advanced Components of Power Electronic - B152

Osnova témat

• AE0M13MKV - Advanced Components of Power Electronic
  

  AE0M13MKV - Advanced Components of Power Electronic

  Power semiconductor device (diodes, BJTs, thyristors, MOSFETs and IGBTs) and integraed structures (modules). Structures, function, characteristics and parameters, conditions for reliable operation. Connection of devices in parallel and in series. Operating reliability of power components and equipments.
  

  Lessons (laboratories) start at 16:15 (4:15 PM) in the room T2:E1-3c (old marking "H3") in the ground floor of Hall laboratory building. Lessons are compulsory, only excused absences are accepted. English course can be merged together with the czech version of the same course (A0M13MKV) and both courses are provided in the same room at the same time. Lessons are prepared and leaded by Jiří Hájek, lectures are prepared by prof. Benda.

  English literature:

  [1] Benda, V., Gowar, J., Grant, G. A. Power Semiconductor Devices. J.Wiley & Sons, Chichester. 1999.
  [2] Baliga, J. Power Semiconductor Devices. Boston: PWS Publishing Company. 1995.
  [3] Moodle website: AE1B13VST course.

  • News Fórum
  • Otázky ke zkoušce (Exam questions) Soubor
• Week 1
  

  Week 1

  Lecture 23. 2. 2016: Introduction to power semiconductors, basic physical principles.
  Laboratory 23. 2. 2016: Organization, safety rules in laboratory T2:E1-3.

  • Lecture 1 EN Soubor
• Week 2
  

  Week 2

  Lecture 1. 3. 2016: Power diodes (static and dynamic characteristics)
  Laboratory 1. 3. 2016: Introduction to measurement in power engineering, seminar session and basic static and dynamic parameters of power diodes and thyristors.

  • Lecture 2 EN Soubor
  • Low Level Measurements Handbook URL
  • GaN Power Device Technologies (ISPS2010) Soubor
  • SiC Power Devices (page 1-28) Soubor
  • SiC Power Devices (page 29-54) Soubor
• Week 3
  

  Week 3

  Lecture 8. 3. 2016: Power P-I-N diodes. Fast recovery diod with small commutation charge.
  Laboratory 8. 3. 2016: Measurement of reverse (off-state) parameters of diodes and the temperature dependance.

  • Lecture 3 EN Soubor
  • Anglická verze obdobného zadání z předmětu KVE URL
  • Aplikace DIODA.EXE Soubor
  • Laboratory task 1 Soubor
• Week 4
  

  Week 4

  Lecture 15. 3. 2016: Schottky diodes.
  Laboratory 15. 3. 2016: Measurement of the on-state (forward) parameters of diodes and temperature dependence.

  • D83-004 - 30A Schottky barrier diode Soubor
  • Katalogové listy měřených součástek (návod z předmětu X13KVE) URL
  • Lecture 4 EN Soubor
  • Laboratory task 2 Soubor
• Week 5
  

  Week 5

  Lecture 22. 3. 2016: BJT and Thyristors (SCR).
  Laboratory 22. 3. 2016: Reverse recovery of power diodes, commutation and dynamic parameters.

  • Lecture 5 EN Soubor
  • Anglická verze obdobného zadání z předmětu KVE URL
  • Laboratory task 3 Soubor
• Week 6
  

  Week 6

  Lecture 29. 3. 2016: Modern devices with special gate unit (GTO, IGCT).
  Laboratory 29. 3. 2016: Seminar session about tranzistors and explanation for the second block of laboratory tasks.
• Week 7
  

  Week 7

  Lecture 5. 4. 2016: Power MOSFETs (VD MOS, T MOS). SJ MOS
  Laboratory 5. 4. 2016: Measurement of the static parameters for BJT and FET tranzistor, temperature dependence.

  • Katalog IRF 730 Soubor
  • Katalog BD 711 Soubor
  • Laboratory task 4 Soubor
• Week 8
  

  Week 8

  Lecture 12. 4. 2016: IGBT, PT and NPT structures
  Laboratory 12. 4. 2016: Dynamic effects in power circuits with inductances, snubbers.

  • katlaog - gt20j101 Soubor
  • Katalog IRF 740 Soubor
  • Katalog KUY12 Soubor
  • Laboratory task 5 Soubor
• Week 9
  

  Week 9

  Lecture 19. 4. 2016: Cooling, current limitation, reliable operation.
  Laboratory 19. 4. 2016: Dynamic parameters, turning off/on for FET, BJT, IGBTs.

  • Laboratory task 6 Soubor
• Week 10
  

  Week 10

  Lecture 26. 4. 2016: Power devices for high frequency (RF LDMOS, HJT)
  Laboratory 26. 4. 2016: Seminar session for cooling and design of power semiconductors.
• Week 11
  

  Week 11

  Lecture 3. 5. 2016: Power integrated circuits (PIC), modules (IPM).
  Laboratory 3. 5. 2016: Seminar session for cooling and design of power semiconductors, explanation of thermal resistance Rth and transient thermal impedance Zth.

  • Moduly DSA120 - inteligentní modul (popis) Soubor
  • Katalogový list modulu PM75DSA120 Soubor
• Week 12
  

  Week 12

  Lecture 10. 5. 2016: To be prepared
  Laboratory 10. 5. 2016: Measurement of the transient thermal impedance.

  • Laboratory task 7 Soubor
• Week 13
  

  Week 13

  Lecture 17. 5. 2016: Series and parallel conneciton of power devices.
  Laboratory 17. 5. 2016: Visit and tour through ABB Semiconductor factory in Prague.

  During May 2016 we will visit clean production area at ABB Semiconductors., old traditional czech manufacturer of semicoductor ČKD Polovodiče. Factory is placed at Prague 4, Novodvorská street 138a/1768 near the bus stop Jílovská. You can take the bus line no. 196 from Smíchovké nádraží (undeground B) or the bus line no. 106 from Kačerov (undeground C). Our visit is planed to monday the 16th. of May 2016 and will begin at 8:00 in the morning in the entrance of ABB Factory. Please, wait for me at the reception.
• Week 14
  

  Week 14

  Lecture 24. 5. 2016: Reliable operation of power devices, defects.
  Laboratory 24. 5. 2016: Assesment, final checking of test reports.

  For awarding of assesment (ungraded) the regular attendance is required (three appologized absences are acceptable) and also reports from all measured tasks. Before awarding of assesment, some discusion about reports will be provided. Assesment must be awarded before the 9th. of September 2016.