Advanced Power Semiconductor Devices and ICs

B232 - Summer 23/24
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Advanced Power Semiconductor Devices and ICs - XP34APD

Student survey results
Credits 4
Semesters Both
Completion Exam
Language of teaching Czech
Extent of teaching 2P+2C
Annotation
Physical and technological structures. Development trends. Parameters and applications. Bipolar structures. MOS structures. BiMOS structures. PN diodes. Schottky diodes. Bipolar transistors. MOS and IGBT transistors. Thyristors (including GTO and MCT). Secondary breakdown, mechanism, safe area. Smart-power devices. High voltage ICs, operation, principles, applications
Study targets
No data.
Course outlines
1. Physical and technological structures
2. Development trends
3. Parameters and applications
4. Bipolar structures
5. MOS structures
6. BiMOS structures
7. PN diodes
8. Schottky diodes
9. Bipolar transistors
10. MOS and IGBT transistors
11. Thyristors (including GTO and GCT)
12. Secondary breakdown, mechanism, SOA
13. Smart-power devices
14. High voltage ICs, operation, principles, applications
Exercises outlines
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Literature
B. J. Baliga, Power Semiconductor Devices, PWS Publishing Company, 2000
Requirements
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