CTU FEE Moodle
Advanced Power Semiconductor Devices and ICs
B232 - Summer 23/24
Advanced Power Semiconductor Devices and ICs - XP34APD
Credits | 4 |
Semesters | Both |
Completion | Exam |
Language of teaching | Czech |
Extent of teaching | 2P+2C |
Annotation
Physical and technological structures. Development trends. Parameters and applications. Bipolar structures. MOS structures. BiMOS structures. PN diodes. Schottky diodes. Bipolar transistors. MOS and IGBT transistors. Thyristors (including GTO and MCT). Secondary breakdown, mechanism, safe area. Smart-power devices. High voltage ICs, operation, principles, applications
Study targets
No data.
Course outlines
1. Physical and technological structures
2. Development trends
3. Parameters and applications
4. Bipolar structures
5. MOS structures
6. BiMOS structures
7. PN diodes
8. Schottky diodes
9. Bipolar transistors
10. MOS and IGBT transistors
11. Thyristors (including GTO and GCT)
12. Secondary breakdown, mechanism, SOA
13. Smart-power devices
14. High voltage ICs, operation, principles, applications
2. Development trends
3. Parameters and applications
4. Bipolar structures
5. MOS structures
6. BiMOS structures
7. PN diodes
8. Schottky diodes
9. Bipolar transistors
10. MOS and IGBT transistors
11. Thyristors (including GTO and GCT)
12. Secondary breakdown, mechanism, SOA
13. Smart-power devices
14. High voltage ICs, operation, principles, applications
Literature
B. J. Baliga, Power Semiconductor Devices, PWS Publishing Company, 2000